Monday, 25 May 2020

Shockley Equation Verification

The 1N4148 Diode 
and the 
Shockley Equation.

My next project will be to design from scratch, a functioning and reliable high fidelity stereo headphone amplifier. Although based on a well established Class A-B model, in this project I will seek to derive all the related equations myself. But first there is a matter of investigating the 1N4148 diode (as one example), and its V-I characteristic.

There must be several such suitable diodes I could use to control the biasing of the eventual Class A-B push-pull headphone amplifier.

Below is a table showing forward bias I-V measurements I took, the input voltages varied from 0.575v to 0.835v.

I (mA)
0.393
0.644
1.060
1.747
2.680
4.160
6.340
9.520
13.900
19.540
26.485
30.614
V (volts)
0.575
0.600
0.625
0.650
0.675
0.700
0.725
0.750
0.775
0.800
0.825
0.835


Basic Diode Action

Under forward bias configuration (as shown) the
width of the contact potential is narrowed as electron current
is swept across the junction.

William Shockley Equation

According to the Shockley Equation, the relationship between forward bias diode voltage and diode current for a PN junction diode is ...




Where IO = reverse saturation current,  Io = 25*10-9 for the IN4148
VT= KT/q ... thermal equivalant of voltage, 
K = boltzmann constant, T = absolute temperature, q = electron charge.  
And at 20C VT ~ 0.025v

n= ideality factor, 
n=1 for a perfect diode, but often n = 1.. 2.5

From my empirical results, I wanted to establish n, and by ignoring the '-1' term, and rearranging I obtain ...




For the 1N4148 data above, I calculated the mean value of  n, that is ...

n = 2.351 

(to 4 significant figures)

With that I plotted the data vs the Shockley Equation model .... 


The correlation was remarkably good, better than I had anticipated! 

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